Infineon IPW60R280C6 CoolMOS™ Power MOSFET: High-Efficiency Performance for Advanced Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPW60R280C6 CoolMOS™ Power MOSFET stands out as a premier solution engineered for advanced switching applications. This device leverages Infineon’s cutting-edge superjunction technology to deliver a remarkable blend of low losses, high robustness, and superior switching performance, making it an ideal choice for demanding sectors such as server and telecom SMPS, industrial power systems, and renewable energy inverters.

A cornerstone of the IPW60R280C6's performance is its exceptionally low on-state resistance (R DS(on)) of just 280 mΩ at a drain-source voltage (V DS) of 650 V. This low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Designers can achieve more compact form factors by requiring less cooling, thereby pushing the boundaries of power density. Furthermore, the MOSFET boasts outstanding switching characteristics, thanks to its low gate charge (Q G) and optimized internal capacitances. This enables faster switching speeds, which is crucial for high-frequency operation, while simultaneously reducing switching losses—a critical factor for improving overall efficiency in hard-switching and resonant converter topologies.

Beyond raw performance metrics, the IPW60R280C6 is designed for reliability and ease of use. It features a highly avalanche rugged design, ensuring it can handle unexpected voltage spikes and stressful operating conditions without failure. The component is also qualified according to the highest industry standards, guaranteeing long-term operational stability. Its TO-247 package offers excellent thermal performance, providing engineers with a reliable and robust physical platform for high-power applications.

In summary, the Infineon IPW60R280C6 CoolMOS™ Power MOSFET is a high-performance semiconductor device that empowers engineers to design next-generation power systems with unprecedented levels of efficiency and power density. Its superior electrical characteristics make it a cornerstone technology for advancing the state of the art in power conversion.

ICGOOODFIND: The Infineon IPW60R280C6 is a top-tier 650 V CoolMOS™ MOSFET that sets a high bar for efficiency through its ultra-low R DS(on) and excellent switching performance, making it a superior choice for high-power, high-frequency switching applications where thermal management and energy savings are paramount.

Keywords: High Efficiency, Low On-Resistance, Advanced Switching, Power MOSFET, Robust Performance.