Infineon IKW25N120CS7: A High-Performance 1200V TRENCHSTOP™ IGBT for Power Switching Applications
The relentless pursuit of higher efficiency, robustness, and power density in electronic systems drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IKW25N120CS7, a 1200V IGBT that exemplifies the advanced TRENCHSTOP™ technology. This device is engineered to meet the rigorous demands of modern power switching applications, offering an optimal blend of low saturation voltage and short switching times.
A key feature of the IKW25N120CS7 is its low VCE(sat) of 1.85V (typical at 25A, 100°C). This low on-state voltage directly translates to reduced conduction losses, which is paramount for improving the overall efficiency of a system, particularly in high-current operation. This characteristic makes it exceptionally suitable for applications like welding equipment, uninterruptible power supplies (UPS), and industrial motor drives, where minimizing energy waste is critical.
Complementing its excellent conduction performance is its fast switching capability. The TRENCHSTOP™ cell design and optimized field-stop technology minimize turn-on and turn-off energy losses (Eon/Eoff). This allows for higher switching frequencies in designs, which in turn can lead to the use of smaller passive components like inductors and capacitors, thereby increasing system power density and reducing overall size and cost.
Beyond performance, the device is designed for enhanced ruggedness and reliability. It features a positive temperature coefficient, which simplifies the paralleling of multiple IGBTs for higher power levels. Furthermore, it offers robust short-circuit withstand time (tsc) of up to 10µs, ensuring the device can survive fault conditions long enough for control circuits to react and protect the system. The integrated anti-parallel emitter-controlled diode provides excellent softness during reverse recovery, reducing voltage overshoot and electromagnetic interference (EMI).
Housed in a TO-247 package, the IKW25N120CS7 provides superior thermal performance, enabling effective heat dissipation and supporting high power operation. This package is industry-standard and allows for robust mechanical construction and easy mounting.
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In summary, the Infineon IKW25N120CS7 stands out as a superior solution for high-voltage, high-frequency power conversion. Its combination of low conduction loss, fast switching speed, and intrinsic ruggedness makes it an ideal choice for designers aiming to push the boundaries of efficiency and reliability in power electronics.
Keywords: TRENCHSTOP™ IGBT, Low VCE(sat), Fast Switching, 1200V, Power Density.
