Infineon IPB039N10N3GATMA1 OptiMOS 3 Power MOSFET: Key Features and Applications

The Infineon IPB039N10N3GATMA1 is a benchmark N-channel power MOSFET from the esteemed OptiMOS 3 family, engineered to deliver exceptional performance in a compact, surface-mount LFPAK package. This device is designed for power conversion and switching applications where high efficiency, power density, and reliability are paramount. By leveraging advanced silicon technology, it offers a superior alternative to older-generation MOSFETs, enabling designers to create more efficient and compact solutions.

Key Features

At the core of this MOSFET's performance is its exceptionally low typical on-state resistance (RDS(on)) of just 3.9 mΩ at a gate voltage of 10 V. This ultra-low resistance is the primary factor in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The device is rated for a maximum drain-source voltage (VDS) of 100 V, making it a robust choice for a wide array of industrial and automotive applications.

Furthermore, it features low gate charge (Qg) and outstanding switching characteristics. The low Qg ensures that the device can be driven quickly and efficiently, reducing switching losses and simplifying the design of the gate drive circuitry. This combination of low RDS(on) and low Qg is a hallmark of the OptiMOS 3 technology, providing an excellent figure of merit (FOM). Housed in a LFPAK (Leadless Footprint Package) that is mechanically robust and offers a footprint-compatible alternative to DPAK, it provides superior thermal performance and power density in a smaller space, all while ensuring high reliability.

Primary Applications

The blend of high voltage capability, low losses, and a robust package makes the IPB039N10N3GATMA1 incredibly versatile. Its primary application areas include:

DC-DC Converters: It is an ideal choice for high-current synchronous buck and boost converters in server, telecom, and computing power supplies, where efficiency is critical.

Motor Control: The MOSFET excels in driving brushed and brushless DC motors for industrial automation, robotics, and automotive systems (e.g., electric power steering, pump control).

Solar Inverters: Its 100 V rating and high efficiency make it suitable for use in the power stages of solar microinverters and optimizers.

Automotive Systems: Designed to meet the rigorous demands of the automotive industry, it is used in 48V systems, battery management (BMS), and other high-reliability electronic control units (ECUs).

Load Switching: It is perfect for high-side and low-side switch applications requiring minimal voltage drop and high efficiency.

ICGOODFIND: The Infineon IPB039N10N3GATMA1 OptiMOS 3 MOSFET stands out as a high-efficiency, high-reliability power switch. Its optimal balance of ultra-low RDS(on), low gate charge, and a thermally efficient package makes it an outstanding component for designers aiming to maximize performance in power conversion, motor drive, and automotive systems.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, LFPAK Package, Motor Control