Infineon IPW60R060P7: The Benchmark 60 mΩ Superjunction MOSFET for High-Efficiency Power Conversion
In the relentless pursuit of higher efficiency and power density in modern power electronics, the choice of switching device is paramount. The Infineon IPW60R060P7 has emerged as a definitive benchmark in the 600V superjunction MOSFET category, setting new standards with its ultra-low on-state resistance of just 60 mΩ. This device is engineered to address the critical challenges faced by designers of switched-mode power supplies (SMPS), server and telecom power systems, industrial motor drives, and renewable energy inverters.
The core of the IPW60R060P7's superiority lies in Infineon's advanced CoolMOS™ P7 technology. This generation of superjunction MOSFETs represents a significant leap forward, not merely in reducing RDS(on) but in achieving an exceptional balance between switching performance and conduction losses. The extremely low gate charge (QG) and figure of merit (FOM) ensure that the device operates with minimal switching losses, even at high frequencies. This is crucial for increasing the switching frequency of power supplies, which allows for the use of smaller passive components like inductors and capacitors, thereby dramatically boosting overall power density.
Furthermore, the IPW60R060P7 is designed for robustness and reliability. It features a highly avalanche rugged design and an integrated fast body diode with excellent reverse recovery characteristics. This makes it exceptionally resilient against voltage spikes and other stressful conditions commonly encountered in hard-switching topologies like power factor correction (PFC) and half-bridge circuits. Designers can leverage this ruggedness to create more compact systems with reduced snubber circuitry, lowering both system cost and complexity.
Another pivotal advantage is its enhanced light-load efficiency. Modern energy standards require high efficiency across the entire load range, not just at full load. The optimized technology behind the IPW60R060P7 minimizes losses at light loads, contributing significantly to meeting stringent global energy regulations such as ErP and 80 PLUS Titanium requirements for server PSUs.
For practical application, the TO-247 package offers superior thermal performance, enabling efficient heat dissipation and allowing designers to push the limits of current handling in their systems. This package is widely preferred in high-power applications where thermal management is a key concern.
ICGOO
The Infineon IPW60R060P7 is not just another MOSFET; it is a comprehensive solution that encapsulates the pinnacle of superjunction technology. It stands as the benchmark for 600V, 60 mΩ devices by delivering an unmatched combination of ultra-low conduction losses, superior switching performance, and exceptional ruggedness. By enabling higher efficiency, greater power density, and more reliable end products, the IPW60R060P7 is the definitive choice for power engineers aiming to lead in the competitive landscape of high-efficiency power conversion.
Keywords:
1. Superjunction MOSFET
2. High-Efficiency
3. Low On-Resistance
4. Power Density
5. Switching Performance
