Infineon IPW60R099P7: The High-Performance CoolMOS™ P7 Power MOSFET
In the relentless pursuit of higher efficiency and power density across industries like server SMPS, telecom, industrial drives, and renewable energy systems, the power MOSFET stands as a critical component. The Infineon IPW60R099P7, a member of the esteemed CoolMOS™ P7 family, emerges as a premier solution, engineered to push the boundaries of performance.
At the heart of its innovation is the superjunction (SJ) technology, which has been meticulously refined in the P7 generation. This technology enables the IPW60R099P7 to achieve an exceptionally low on-state resistance (R DS(on)) of just 99 mΩ at a 600 V drain-source voltage rating. This remarkably low R DS(on) is a key driver for minimizing conduction losses, directly translating into higher system efficiency and reduced heat generation.
Beyond raw conduction performance, the CoolMOS™ P7 technology places a strong emphasis on switching behavior. The device features outstanding switching characteristics and a reduced gate charge (Q G). This combination ensures that switching losses are kept to an absolute minimum, which is paramount for high-frequency operation. The ability to operate efficiently at higher frequencies allows designers to use smaller passive components like inductors and capacitors, thereby significantly increasing the overall power density of the end application.
Reliability is another cornerstone of the IPW60R099P7's design. It boasts a high level of robustness and durability, underpinned by a superior body diode with soft reverse recovery characteristics. This enhances its resilience in demanding environments and hard-switching topologies like power factor correction (PFC) circuits. Furthermore, the MOSFET offers an extended safe operating area (SOA), providing designers with a greater margin of safety and flexibility.
The product is offered in the proven TO-247 package, ensuring excellent thermal performance and making it compatible with existing manufacturing and assembly processes. This allows for both easy adoption into new designs and straightforward upgrades for existing platforms seeking a performance boost.
ICGOODFIND: The Infineon IPW60R099P7 CoolMOS™ P7 represents a significant leap in power semiconductor technology, masterfully balancing ultra-low conduction losses, superior switching performance, and unwavering reliability to meet the stringent demands of modern high-efficiency power conversion systems.
Keywords: CoolMOS™ P7, Superjunction Technology, Low R DS(on), High Switching Performance, High Reliability.
